Published in

Materials Research Society, Materials Research Society Symposium Proceedings, (922), 2006

DOI: 10.1557/proc-0922-u07-15

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“Scratching” Carbon Nanotubes onto Si Substrates

Journal article published in 2006 by Jun Yu, Ying Chen ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

AbstractLarge-scale, high-density, and patterned carbon nanotubes (CNTs) on both pure Si and quartz (SiO2) substrates have been produced using different approaches. The CNTs were synthesized by pyrolysis of the ball-milled iron phthalocyanine (FePc) in a tube furnace under a Ar-5% H2 gas flow. Because patterned CNTs are difficult to grow directly on smooth and perfect single-crystalline Si wafer surface, mechanical scratches were created to help the selective deposition and growth of CNTs on the scratched areas. This simple process does not require pre-deposition of any metal catalysts. For SiO2 substrates, which can be readily covered by a CNT film, patterned CNTs are produced using a TEM grid as mask to cover the areas where CNTs are not needed. The growth temperature and vapor density have strong influence on the patterned CNT formation. The scratch areas with a special structure and a higher surface energy help the selective nucleation of CNTs.