Dissemin is shutting down on January 1st, 2025

Published in

IOP Publishing, Plasma Sources Science and Technology, 1(1), p. 59-66

DOI: 10.1088/0963-0252/1/1/007

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The role of substrate temperature and bias in the plasma deposition from tetramethylsilane

Journal article published in 1992 by P. Favia ORCID, R. Lamendola, R. d'Agostino
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

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Preprint: archiving forbidden
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Postprint: archiving forbidden
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Published version: archiving forbidden
Data provided by SHERPA/RoMEO

Abstract

Thin transparent polymeric films have been deposited from low-pressure argon/tetramethylsilane radio-frequency glow discharges at controlled substrate bias and temperature. The effect of positive ion bombardment and substrate temperature on both film growth rate and chemical composition has been studied. An account of the post-discharge fast oxidation of films exposed to oxygen is also given. A general deposition mechanism proposed.