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IOP Publishing, Journal of Physics: Condensed Matter, 9(24), p. 095803

DOI: 10.1088/0953-8984/24/9/095803

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Electronic structure of ytterbium-implanted GaN at ambient and high pressure: experimental and crystal field studies

Journal article published in 2012 by A. Kaminska ORCID, C.-G. Ma, M. G. Brik, A. Kozanecki, M. Boćkowski, E. Alves, A. Suchocki
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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