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Taylor and Francis Group, Integrated Ferroelectrics, 1-4(31), p. 163-171, 2000

DOI: 10.1080/10584580008215650

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Formation of ferroelectric nano-domains using scanning force microscopy for the future application of memory devices

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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