The energy-band alignments for zb-ZnSe(001)/α-Zn_(3)P_2(001), w-CdS(0001)/α-Zn_(3)P_2(001), and w-ZnO(0001)/α-Zn_(3)P_2(001) heterojunctions have been determined using high-resolution x-ray photoelectron spectroscopy via the Kraut method. Ab initio hybrid density functional theory calculations of the valence-band density of states were used to determine the energy differences between the core level and valence-band maximum for each of the bulk materials. The ZnSe/Zn_(3)P_2 heterojunction had a small conduction-band offset, ΔEC, of −0.03 ± 0.11 eV, demonstrating a nearly ideal energy-band alignment for use in thin-film photovoltaic devices. The CdS/Zn_(3)P_2 heterojunction was also type-II but had a larger conduction-band offset of ΔEC = −0.76 ± 0.10 eV. A type-III alignment was observed for the ZnO/Zn_(3)P_2 heterojunction, with ΔEC = −1.61 ± 0.16 eV indicating the formation of a tunnel junction at the oxide–phosphide interface. The data also provide insight into the role of the II-VI/Zn_(3)P_2 band alignment in the reported performance of Zn_(3)P_2 heterojunction solar cells.