Published in
Emerging Technologies in Security and Defence II; and Quantum-Physics-based Information Security III
DOI: 10.1117/12.2072172
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AlGaInN laser diode technology for defence, security and sensing applications
,
Lucja Marona,
Mike Boćkowski,
Mike Leszczyński,
Przemek Wisniewski,
Robert Czernecki,
Robert Kucharski,
Grzegorz Targowski,
Scott Watson,
Antony E. Kelly
Full text: Unavailable
Abstract
The latest developments in AlGaInN laser diode technology are reviewed for defence, security and sensing applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., i.e, 380nm, to the visible, i.e., 530nm, by tuning the indium content of the laser GaInN quantum well. Advantages of using Plasma assisted MBE (PAMBE) compared to more conventional MOCVD epitaxy to grow AlGaInN laser structures are highlighted. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of