Published in
Institute of Electrical and Electronics Engineers, IEEE Electron Device Letters, 4(34), p. 493-495, 2013
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$\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $β$– $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates
Journal article published in 2013 by
Kohei Sasaki,
Masataka Higashiwaki 
,
Akito Kuramata,
Takekazu Masui,
Shigenobu Yamakoshi
,
Akito Kuramata,
Takekazu Masui,
Shigenobu Yamakoshi
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