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2009 International Semiconductor Device Research Symposium

DOI: 10.1109/isdrs.2009.5378071

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Electrodeposited Ni/Ge contacts for limiting leakage currents in Schottky barrier MOSFETs

Proceedings article published in 2009 by Muhammad K. Husain, Xiaoli V. Li, C. H. de Groot, Kees De Groot, Cornelis De Groot ORCID
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This paper is available in a repository.

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Abstract

In the present work, we show that electrodeposited Ni/Ge and NiGe/Ge SBs formed even on highly n-doped Ge exhibit near ideal Schottky barrier behavior with very low reverse leakage current. In order to suppress source-to-drain leakage currents in short channel SB-pMOSFETs, a highly n-doped substrate should be used. The low off-current exhibited by electrodeposited SBs on highly doped Ge might make this possible limiting the junction leakage current at the drain/body contact.