Published in
2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits
DOI: 10.1109/ipfa.2015.7224417
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A high tensile stress spacer by low temperature microwave anneal induced 50% mobility enhancement for nano scale FinFETs device
Proceedings article published in 2015 by
Yi-Ju Chen,
Yao-Ming Huang,
Yun-Fang Hou,
Min-Cheng Chen,
Yao-Jen Lee,
Wen-Fa Wu,
Jia-Ming Shieh
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