Effect of deposition conditions and annealing temperature on tunnel magnetoresistance and structure of MgO-based double-barrier magnetic tunnel junctions
Journal article published in 2015 by
W. Feng,
C. Fowley,
V. Sluka,
E. Kowalska,
J. Lindner,
K. Bernert,
H. Gan,
R. Huebner,
A. Kunz,
Y. Aleksandrov,
Ieee,
R. Hubner,
Juergen Fassbender 
,
J. Coey ,
A. Deac
,
J. Coey ,
A. Deac
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