Published in
2015 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
DOI: 10.1109/imfedk.2015.7158572
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Impacts of orientation and cross-sectional shape on hole mobility of Si nanowire MOSFETs
Proceedings article published in 2015 by
Hiroaki Fujihara,
Naoya Morioka 
,
Hajime Tanaka ,
Jun Suda,
Tsunenobu Kimoto
,
Hajime Tanaka ,
Jun Suda,
Tsunenobu Kimoto
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