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Nature Research, Nature Communications, 1(4), 2013

DOI: 10.1038/ncomms3835

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Role of domain walls in the abnormal photovoltaic effect in BiFeO3

Journal article published in 2013 by Akash Bhatnagar, Ayan Roy Chaudhuri, Ayan Roy Chaudhuri, Young Heon Kim, Young Heon Kim, Dietrich Hesse, Marin Alexe ORCID
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

Recently, the anomalous photovoltaic (PV) effect in BiFeO3 (BFO) thin films, which resulted in open circuit voltages (V-oc) considerably larger than the band gap of the material, has generated a revival of the entire field of photoferroelectrics. Here, via temperature-dependent PV studies, we prove that the bulk photovoltaic (BPV) effect, which has been studied in the past for many non-centrosymmetric materials, is at the origin of the anomalous PV effect in BFO films. Moreover, we show that irrespective of the measurement geometry, V-oc as high as 50V can be achieved by controlling the conductivity of domain walls (DW). We also show that photoconductivity of the DW is markedly higher than in the bulk of BFO.