DOI: 10.1063/1.3575178 ; Nitrogen-doped ZnO nanorods were prepared by electrodeposition using two different Zn precursors (zinc nitrate and zinc acetate), while all other growth conditions (dopant precursor, concentration, growth temperature, and bias) were identical. We have shown that the precursor used affects the properties of the ZnO nanorods, and that the presence of rectifying properties in n-GaN/N:ZnO heterojunctions is strongly related to the use of nitrate precursor for ZnO growth. The difference in the properties of ZnO obtained from two precursors is attributed to the differences in native defect and impurity concentrations, which could affect the electronic properties of the samples. ; Author name used in this publication: Aleksandra B. Djurišič ; Author name used in this publication: Kok Wai Cheah ; Author name used in this publication: Chi Chung Ling ; Author name used in this publication: Wai Kin Chan ; Author name used in this publication: Patrick W. K. Fong ; Author name used in this publication: Hsian Fei Lui