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Wiley, Advanced Materials, 16(27), p. 2602-2607, 2015

DOI: 10.1002/adma.201405117

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Large Room-Temperature Electroresistance in Dual-Modulated Ferroelectric Tunnel Barriers

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Pt/BaTiO3/La0.7Sr0.3MnO3 tunnel junctions, at negative voltage bias, for two polarization directions are represented. It is demonstrated that reversing the polarization direction of a ferroelectric barrier in a tunnel junction leads to a change of junction conductance and capacitance, with concomitant variations on the barrier height and effective thickness, both contributing to produce larger electroresistance.