Springer, Lecture Notes in Computer Science, p. 196-203, 2015
DOI: 10.1007/978-3-319-15585-2_22
American Mathematical Society, Mathematics of Computation, 210(64), p. 891, 1995
DOI: 10.2307/2153459
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In this work we present a multi-scale computational framework for evaluation of statistical variability in a molecular based non-volatile memory cell. As a test case we analyse a BULK flash cell with polyoxometalates (POM) inorganic molecules used as storage centres. We focuse our discussions on the methodology and development of our innovative and unique computational framework. The capability of the discussed multi-scale approach is demonstrated by establishing a link between the threshold voltage variability and current-voltage characteristics with various oxidation states of the POMs. The presented simulation framework and methodology can be applied not only to the POM based flash cell but they are also transferrable to the flash cells based on alternative molecules used as a storage media.