Published in

Elsevier, Microelectronics Reliability, 9-11(53), p. 1444-1449

DOI: 10.1016/j.microrel.2013.07.117

Links

Tools

Export citation

Search in Google Scholar

Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications

Journal article published in 2013 by Clément Fleury, Rimma Zhytnytska, Sergey Bychikhin, Mattia Cappriotti, Oliver Hilt, Domenica Visalli, Gaudenzio Meneghesso ORCID, Enrico Zanoni, Joachim Würfl, Joff Derluyn, Gottfried Strasser, Dionyz Pogany
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Green circle
Preprint: archiving allowed
Upload
Red circle
Postprint: archiving forbidden
Red circle
Published version: archiving forbidden
Policy details
Data provided by SHERPA/RoMEO

Abstract

We analyse vertical breakdown signatures in normally-off and normally-on AlGaN/GaN HEMTs on Si and SiC substrate for power applications. The probability distribution function of the breakdown voltage VBD values shows mostly a bimodal distribution that is characteristic for substrate/epitaxy type and bias polarity. Different types of distribution functions are tested. The vertical breakdown is found to be a time dependent phenomenon and hypotheses for its initiation are discussed. Using backside infrared microscopy, we found that the breakdown occurs in localized spots, related to current filaments. Failure localisation under pulsed mode shows better spatial localisation compared to the DC conditions. © 2013 Elsevier Ltd. All rights reserved.