Published in

American Institute of Physics, Applied Physics Letters, 5(99), p. 053108

DOI: 10.1063/1.3622665

Links

Tools

Export citation

Search in Google Scholar

Molecular dynamics simulations of oxide memristors: crystal field effects

Journal article published in 2011 by S. E. Savel'ev ORCID, A. S. Alexandrov, A. M. Bratkovsky, R. Stanley Williams
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

Full text: Download

Green circle
Preprint: archiving allowed
Upload
Green circle
Postprint: archiving allowed
Upload
Orange circle
Published version: archiving restricted
Upload
Policy details
Data provided by SHERPA/RoMEO

Abstract

We present molecular-dynamic simulations of memory resistors (memristors) including the crystal field effects on mobile ionic species such as oxygen vacancies appearing during operation of the device. Vacancy distributions show different patterns depending on the ratio of a spatial period of the crystal field to a characteristic radius of the vacancy-vacancy interaction. There are signatures of the orientational order and of spatial voids in the vacancy distributions for some crystal field potentials. The crystal field stabilizes the patterns after they are formed, resulting in a non-volatile switching of the simulated devices. ; Comment: 9 pages, 3 figures