Published in
American Institute of Physics, Applied Physics Letters, 8(101), p. 082114
DOI: 10.1063/1.4747797
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Electron band alignment at the interface of (100)InSb with atomic-layer deposited Al2O3
Journal article published in 2012 by
H.-Y. Chou,
V. V. Afanas'ev,
M. Houssa 
,
A. Stesmans,
Lin Dong,
Peide D. Ye
,
A. Stesmans,
Lin Dong,
Peide D. Ye
This paper is available in a repository.
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Abstract
From experiments on internal photoemission of electrons at the (100)InSb/Al2O3 interface, the top of the InSb valence band is found to be 3.05 +/- 0.10 eV below the oxide conduction band and corresponds to a conduction band offset of 2.9 +/- 0.1 eV. These results indicate that the top of valence band in InSb lies energetically at the same level as in GaSb and above the valence bands in InxGa1-xAs (0