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American Institute of Physics, Journal of Applied Physics, 6(112), p. 063714

DOI: 10.1063/1.4754514

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Cross-plane electronic and thermal transport properties of p-type La0.67Sr0.33MnO3/LaMnO3 perovskite oxide metal/semiconductor superlattices

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Lanthanum strontium manganate (La0.67Sr0.33MnO3, i.e., LSMO)/lanthanum manganate (LaMnO3, i.e., LMO) perovskite oxide metal/semiconductor superlattices were investigated as a potential p-type thermoelectric material. Growth was performed using pulsed laser deposition to achieve epitaxial LSMO (metal)/LMO (p-type semiconductor) superlattices on (100)-strontium titanate (STO) substrates. The magnitude of the in-plane Seebeck coefficient of LSMO thin films (