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Elsevier, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1(629), p. 377-381

DOI: 10.1016/j.nima.2010.11.097

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Electrical analysis of carbon nanostructures/silicon heterojunctions designed for radiation detection

Journal article published in 2011 by A. Tinti, F. Righetti, T. Ligonzo, A. Valentini, E. Nappi, A. Ambrosio, M. Ambrosio, C. Aramo ORCID, P. Maddalena ORCID, P. Castrucci, M. Scarselli, M. De Crescenzi, E. Fiandrini, V. Grossi, S. Santucci and other authors.
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

A new class of radiation detectors based on carbon nanostructures as the active photosensitive element has been recently developed. In this scenario the optimization of the device, both in dark and on light irradiation, is a crucial point. Here, we report on electrical measurements performed in dark conditions on carbon nanofibers and nanotubes deposited on silicon substrates. Our experimental results were interpreted in terms of a multistep tunneling process occurring at the carbon nanostructures/silicon interface. (C) 2010 Elsevier B.V. All rights reserved.