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American Institute of Physics, Applied Physics Letters, 13(100), p. 133503

DOI: 10.1063/1.3697832

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Electron temperature in electrically isolated Si double quantum dots

Journal article published in 2011 by A. Rossi, T. Ferrus ORCID, D. A. Williams
This paper is available in a repository.
This paper is available in a repository.

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Abstract

Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically-isolated double quantum dots (DQD) realised in phosphorus-doped silicon can be detected via capacitively coupled single-electron tunnelling devices. By means of time-resolved measurements of the detector's conductance, we investigate the dots' occupancy statistics in temperature. We observe a significant reduction of the effective electron temperature in the DQD as compared to the temperature in the detector's leads. This sets promises to make isolated DQDs suitable platforms for long-coherence quantum computation. ; Comment: 4 pages, 3 figures