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American Institute of Physics, Applied Physics Letters, 10(92), p. 103314

DOI: 10.1063/1.2896602

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Gold nanoparticle-pentacene memory-transistors

Journal article published in 2008 by Christophe Novembre, David Guerin ORCID, Kamal Lmimouni, Christian Gamrat, Dominique Vuillaume
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This paper is available in a repository.

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Abstract

We demonstrate an organic memory-transistor device based on a pentacene-gold nanoparticles active layer. Gold (Au) nanoparticles are immobilized on the gate dielectric (silicon dioxide) of a pentacene transistor by an amino-terminated self-assembled monolayer. Under the application of writing and erasing pulses on the gate, large threshold voltage shift (22V) and on/off drain current ratio of ∼3×104 are obtained. The hole field-effect mobility of the transistor is similar in the on and off states (less than a factor of 2). Charge retention times up to 4500s are observed. The memory effect is mainly attributed to the Au nanoparticles.