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Wiley, physica status solidi (a) – applications and materials science, 5(213), p. 1296-1301, 2015

DOI: 10.1002/pssa.201532764

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Effect of lattice‐matched InAlGaN electron‐blocking layer on hole transport and distribution in InGaN/GaN multiple quantum wells of visible light‐emitting diodes

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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