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American Physical Society, Physical review B, 8(77), 2008

DOI: 10.1103/physrevb.77.085305

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Semianalytical model for simulation of electronic properties of narrow-gap strained semiconductor quantum nanostructures

Journal article published in 2008 by Jacky Even ORCID, François Doré, Charles Cornet ORCID, Laurent Pedesseau
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This paper is available in a repository.

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Abstract

A complete semianalytical model is proposed for the simulation of the electronic, mechanical, and piezoelectric properties of narrow-gap strained semiconductor quantum nanostructures. A transverse isotropic approximation for the strain and an axial approximation for the strained 8x8 Hamiltonian are proposed. It is applied extensively to the case of InAs/InP quantum dots (QDs). Symmetry analysis shows that there does exist a nonvanishing splitting on the electron P states due to the coupling with valence band. This splitting, which was not considered before, is found to be smaller in InAs/GaAs QD than in InAs/InP QD. Analytic expressions for the first and second order piezoelectric polarizations are used to evaluate the perturbation of electronic states.