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Elsevier, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2(556), p. 490-494

DOI: 10.1016/j.nima.2005.11.065

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An electron-multiplying "Micromegas" grid made in silicon wafer post-processing technology

Journal article published in 2005 by M. Chefdeville, P. Colas, Y. Giomataris, Ioanis Giomataris, H. van der Graaf, S. van der Putten, H. van der Graaf, Erik H. M. Heijne, S. van der Putten, C. Salm, J. Schmitz ORCID, S. Smits, J. Timmermans, J. L. Visschers
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This paper is available in a repository.

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Abstract

A technology for manufacturing an aluminium grid onto a silicon wafer has been developed. The grid is fixed parallel and precisely to the wafer (anode) surface at a distance of 50 \mum by means of insulating pillars. When some 400 V are applied between the grid and (anode) wafer, gas multiplication occurs : primary electrons from the drift space above the grid enter the holes and cause electron avalanches in the high-field region between the grid and the anode. Production and operational characteristics of the device are described. With this newly developed technology, CMOS (pixel) readout chips can be covered with a gas multiplication grid. Such a chip forms, together with the grid, an integrated device which can be applied as readout in a wide field of gaseous detectors.