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IOP Publishing, Japanese Journal of Applied Physics, 5S2(50), p. 05FC03, 2011

DOI: 10.1143/jjap.50.05fc03

IOP Publishing, Japanese Journal of Applied Physics, 5S2(50), p. 05FC03

DOI: 10.7567/jjap.50.05fc03

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Excited States of the A and B Free Excitons in CuInSe2

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This paper is available in a repository.

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Abstract

CuInSe2 single crystals, grown by the vertical Bridgman technique were studied using polarisation resolved photoluminescence (PL) at cryogenic temperatures. The emission lines related to the first (n = 2) excited states for the A and B free excitons were observed in the PL spectra at 1.0481 and 1.0516 eV, respectively. The spectral positions of these lines were used to estimate accurate values for the A and B exciton binding energies (8.5 and 8.4 meV, respectively), Bohr radii (7.5 nm), band gaps (E g A = 1.050 eV and E g B = 1.054 eV), and the static dielectric constant (11.3) assuming the hydrogenic model.