Low-Temperature Atomic-Layer-Deposited High-κ Dielectric for p-Channel In0.7Ga0.3As/GaAs0.35Sb0.65Heterojunction Tunneling Field-Effect Transistor
Journal article published in 2013 by
Bijesh Rajamohanan,
Dheeraj Mohata,
Dmitry Zhernokletov,
Barry Brennan,
Robert M. Wallace 
,
Roman Engel-Herbert,
Suman Datta
,
Roman Engel-Herbert,
Suman Datta
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