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American Institute of Physics, Applied Physics Letters, 6(108), p. 069901

DOI: 10.1063/1.4941993

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Erratum: “Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states” [Appl. Phys. Lett. 106, 152104 (2015)]

Journal article published in 2016 by Junjie Wang, Daniel Rhodes, Simin Feng, Minh An T. Nguyen, K. Watanabe ORCID, T. Taniguchi, Thomas E. Mallouk ORCID, Mauricio Terrones, Luis Balicas, J. Zhu
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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