Published in
Elsevier, Microelectronic Engineering, (106), p. 129-131
DOI: 10.1016/j.mee.2012.12.020
Links
Tools
Study of the impact of doping concentration and Schottky barrier height on ohmic contacts to n-type germanium
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Postprint:
archiving forbidden
Published version:
archiving forbidden
Data provided by 