Published in
Institute of Electrical and Electronics Engineers, IEEE Transactions on Electron Devices, 12(62), p. 4029-4036, 2015
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On the Origin of Low-Resistance State Retention Failure in HfO<sub>2</sub>-Based RRAM and Impact of Doping/Alloying
Journal article published in 2015 by
Boubacar Traore 
,
Philippe Blaise,
Elisa Vianello,
Helen Grampeix,
Simon Jeannot,
Luca Perniola,
Barbara De Salvo,
Yoshio Nishi
,
Philippe Blaise,
Elisa Vianello,
Helen Grampeix,
Simon Jeannot,
Luca Perniola,
Barbara De Salvo,
Yoshio Nishi
This paper was not found in any repository, but could be made available legally by the author.
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