Published in
Institute of Electrical and Electronics Engineers, IEEE Transactions on Electron Devices, 9(54), p. 2546-2550, 2007
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The Reduction of the Dependence of Leakage Current on Gate Bias in Metal-Induced Laterally Crystallized p-Channel Polycrystalline-Silicon Thin-Film Transistors by Electrical Stressing
Journal article published in 2007 by
Shin-Hee Han,
Il-Suk Kang,
Nam-Kyu Song,
Min-Sun Kim,
Jang-Sik Lee 
,
Seung-Ki Joo
,
Seung-Ki Joo
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