Published in
Institute of Electrical and Electronics Engineers, IEEE Transactions on Electron Devices, 7(53), p. 1657-1668, 2006
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Electrical characteristics of 8-/spl Aring/ EOT HfO/sub 2//TaN low thermal-budget n-channel FETs with solid-phase epitaxially regrown junctions
Journal article published in 2006 by
L.-A. Ragnarsson,
S. Severi,
L. Trojman,
K. D. Johnson,
D. P. Brunco,
M. Aoulaiche,
M. Houssa 
,
T. Kauerauf,
R. Degraeve,
A. Delabie,
V. S. Kaushik,
S. De Gendt,
W. Tsai,
G. Groeseneken,
Kristin De Meyer
and other authors.
,
T. Kauerauf,
R. Degraeve,
A. Delabie,
V. S. Kaushik,
S. De Gendt,
W. Tsai,
G. Groeseneken,
Kristin De Meyer
and other authors.
This paper was not found in any repository, but could be made available legally by the author.
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