Published in
Institute of Electrical and Electronics Engineers, IEEE Transactions on Electron Devices, 10(51), p. 1653-1658, 2004
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Accurate Evaluation of Mobility in High Gate-Leakage-Current MOSFETs by Using a Transmission-Line Model
Journal article published in 2004 by
O. Tonomura,
Y. Shimamoto,
H. Miki,
S.-I. Saito,
K. Torii,
M. Hiratani,
J. Yugami
This paper was not found in any repository, but could be made available legally by the author.
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