Published in

Institute of Electrical and Electronics Engineers, IEEE Transactions on Device and Materials Reliability, 2(7), p. 333-339, 2007

DOI: 10.1109/tdmr.2007.901056

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Postbreakdown Conduction in Ultrathin $\hbox{La}_{2} \hbox{O}_{3}$ Gate Dielectrics

Journal article published in 2007 by Enrique Miranda ORCID, Hiroshi Iwai
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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