Published in
Institute of Electrical and Electronics Engineers, IEEE Electron Device Letters, 4(29), p. 303-305, 2008
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Correlation Between DC–RF Dispersion and Gate Leakage in Deeply Recessed GaN/AlGaN/GaN HEMTs
Journal article published in 2008 by
Rongming Chu 
,
Likun Shen,
N. Fichtenbaum,
Zhen Chen,
S. Keller,
S. P. DenBaars,
U. K. Mishra
,
Likun Shen,
N. Fichtenbaum,
Zhen Chen,
S. Keller,
S. P. DenBaars,
U. K. Mishra
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