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Institute of Electrical and Electronics Engineers, IEEE Electron Device Letters, 11(28), p. 945-947, 2007

DOI: 10.1109/led.2007.907266

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Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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