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American Institute of Physics, Journal of Applied Physics, 21(118), p. 215701

DOI: 10.1063/1.4936780

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Charge movement in a GaN-based hetero-structure field effect transistor structure with carbon doped buffer under applied substrate bias

Journal article published in 2015 by Alexander Pooth ORCID, Michael J. Uren ORCID, Markus Cäsar, Trevor Martin, Martin Kuball
This paper is available in a repository.
This paper is available in a repository.

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