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Elsevier, Journal of Non-Crystalline Solids, 1-3(322), p. 225-232

DOI: 10.1016/s0022-3093(03)00206-0

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The effects of silicon nitride and silicon oxynitride intermediate layers on the properties of tantalum pentoxide films on silicon: X-ray photoelectron spectroscopy, X-ray reflectivity and capacitance–voltage studies

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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