Published in
Elsevier, Thin Solid Films, 5(516), p. 770-772
DOI: 10.1016/j.tsf.2007.06.048
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Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric
Journal article published in 2008 by
S. P. Tiwari 
,
P. Srinivas,
S. Shriram,
Nitin S. Kale,
S. G. Mhaisalkar,
V. Ramgopal Rao
,
P. Srinivas,
S. Shriram,
Nitin S. Kale,
S. G. Mhaisalkar,
V. Ramgopal Rao
This paper was not found in any repository, but could be made available legally by the author.
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