Published in
Elsevier, Surface Science, 18(601), p. 4488-4491
DOI: 10.1016/j.susc.2007.04.241
Links
Tools
Real time detection of the epitaxial growth of oligothiophene layers by reflectance anisotropy spectroscopy
Journal article published in 2007 by
G. Bussetti,
C. Goletti,
P. Chiaradia,
A. Sassella,
M. Campione,
S. Tavazzi 
,
A. Borghesi
,
A. Borghesi
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Postprint:
archiving forbidden
Published version:
archiving forbidden
Data provided by 
Abstract
The growth process of thin films and multilayers of quaterthiophene and sexithiophene onto molecular single crystals has been monitored in situ and in real time during deposition by organic molecular beam epitaxy, measuring the anisotropy of the optical reflectivity. The evolution of the spectra with thickness provides the signature of an epitaxial growth of the films. © 2007 Elsevier B.V. All rights reserved.