Published in
Elsevier, Materials Science in Semiconductor Processing, 5-6(11), p. 230-235
DOI: 10.1016/j.mssp.2008.09.004
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Influence of passivating interlayer on Ge/HfO2 and Ge/Al2O3 interface band diagrams
Journal article published in 2008 by
V. V. Afanas’ev,
A. Stesmans,
A. Delabie,
F. Bellenger,
M. Houssa 
,
R. R. Lieten,
C. Merckling,
J. Penaud,
D. P. Brunco,
M. Meuris
,
R. R. Lieten,
C. Merckling,
J. Penaud,
D. P. Brunco,
M. Meuris
This paper was not found in any repository, but could be made available legally by the author.
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