Published in
Elsevier, Journal of Crystal Growth, 7(311), p. 2084-2086
DOI: 10.1016/j.jcrysgro.2008.11.011
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GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al2O3 as a template followed by atomic layer deposition growth
Journal article published in 2009 by
Y. H. Chang,
H. C. Chiu,
W. H. Chang 
,
J. Kwo,
C. C. Tsai,
J. M. Hong,
M. Hong
,
J. Kwo,
C. C. Tsai,
J. M. Hong,
M. Hong
This paper was not found in any repository, but could be made available legally by the author.
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