Published in
Elsevier, Journal of Crystal Growth, 1(269), p. 162-166
DOI: 10.1016/j.jcrysgro.2004.05.045
Links
Tools
Estimation of band-gap energy of intrinsic InN from photoluminescence properties of undoped and Si-doped InN films grown by plasma-assisted molecular-beam epitaxy
Journal article published in 2004 by
Masataka Higashiwaki 
,
Toshiaki Matsui
,
Toshiaki Matsui
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Postprint:
archiving forbidden
Published version:
archiving forbidden
Data provided by 