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Elsevier, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, (40-41), p. 278-281

DOI: 10.1016/0168-583x(89)90978-6

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Sputtering from a liquid Ga-In eutectic alloy

Journal article published in 1989 by Kevin M. Hubbard, Robert A. Weller, Duncan L. Weathers, T. A. Tombrello
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

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Data provided by SHERPA/RoMEO

Abstract

Angular distributions of Ga and In atoms sputtered from a liquid Ga-In eutectic alloy target have been measured for 3, 25, and 50 keV Ar^+ bombardment. Although the bulk composition of the alloy is 16.5 at.% In, thermodynamic surface segregation results in a surface monolayer of > 94 at.% In. A comparison of the measured sputtered-flux composition with the alloy surface composition profile indicates that the fraction of sputtered atoms originating in the first atomic layer, F_1, is ≈ 0.87 at 25 and 50 keV, and increases to 0.94 at 3 keV. Measurements of the secondary-ion flux for 25–250 keV Ar^+ bombardment indicate that F_1 is independent of projectile energy up to 250 keV, in agreement with the predictions of the collision-cascade model. The increase observed at 3 keV may be the result of a decrease in the average energy of recoil atoms participating in the collision cascades.