ABSTRACTFe₂SiS₄ and Fe₂GeS₄ crystalline materials posses direct bandgaps of ∼1.55 and ∼1.4 eV respectively and an absorption coefficient larger than 10⁵ cm^–1; their theoretical potential as solar photovoltaic absorbers has been demonstrated. However, no solar devices that employ either Fe₂SiS₄ or Fe₂GeS₄ have been reported to date. In the presented work, nanoprecursors to Fe₂SiS₄ and Fe₂GeS₄ have been fabricated and employed to build ultra-thin-film layers via spray coating and rod coating methods. Temperature-dependent X-Ray diffraction analyses of nanoprecursors coatings show an unprecedented low temperature for forming crystalline Fe₂SiS₄ and Fe₂GeS₄. Fabricating of ultra-thin-film photovoltaic devices utilizing Fe₂SiS₄ and Fe₂GeS₄ as solar absorber material is presented.