ABSTRACTBismuth vanadate (BiVO₄) is a photoelectrode for the oxidation of water. It is of fundamental importance to understand the electrical and photoelectrochemical properties of this material. In metal oxides, the electronic transport is described by the small polaron model, first described by Mott. In this model, the resistivity varies with temperature as $ρ \,\left( T \right)\, ∝ \,Te^{({{E_a } \mathord{\left/ {\vphantom {{E_a } {(k_B T))}}} \right. \kern-\nulldelimiterspace} {(k_B T))}}} $, where E_a is the hopping activation energy, k_B is the Boltzmann constant and T is the absolute temperature. Resistivity measurements confirm that small polaron hopping dominates in temperature ranges from 250 K to 300 K. In addition measurements from 175K to 250K show the variable range hopping dominates the transport. To this end, the electronic transport properties of BiVO₄ single crystal were characterized using resistivity measurements and Hall effect measurements over temperatures ranging from 175 K to 300 K.