Published in
phys. stat. sol. (c), 2(1), p. 341-346
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The role of Ge predeposition temperature in the MBE epitaxy of SiC on Ssilicon
Journal article published in 2003 by
F. M. Morales,
C.-H. Zgheib,
S. I. Molina 
,
D. Araújo,
R. García,
C. Fernández,
A. Sanz-Hervás,
P. Masri,
P. Weih,
T.-H. Stauden,
V. Cimalla,
O. Ambacher,
J. Pezoldt
,
D. Araújo,
R. García,
C. Fernández,
A. Sanz-Hervás,
P. Masri,
P. Weih,
T.-H. Stauden,
V. Cimalla,
O. Ambacher,
J. Pezoldt
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