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American Physical Society, Physical review B, 23(90), 2014

DOI: 10.1103/physrevb.90.235426

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Weak localization and spin-orbit interaction in side-gate field effect devices at theLaAlO3/SrTiO3interface

Journal article published in 2014 by D. Stornaiuolo, S. Gariglio, A. Fête, M. Gabay, D. Li, D. Massarotti ORCID, J.-M. Triscone
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Using field effect devices with side gates, we modulate the 2 dimensional electron gas hosted at the LaAlO$_3$/SrTiO$_3$ interface to study the temperature and doping evolution of the magnetotransport. The analysis of the data reveals different transport regimes depending on the interplay between the different (elastic, inelastic, and spin-orbit) scattering times and their temperature dependencies. We find that the spin-orbit interaction strongly affects the low temperature transport in the normal state in a very large region of the phase diagram, extending beyond the superconducting dome.