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ECS Meeting Abstracts, 35(MA2014-02), p. 1798-1798, 2014

DOI: 10.1149/ma2014-02/35/1798

The Electrochemical Society, ECS Transactions, 6(64), p. 393-400, 2014

DOI: 10.1149/06406.0393ecst

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Structural and Optical Properties of Ge1-XSnx Alloys Grown on GaAs (001) by R. F. Magnetron Sputtering

Journal article published in 2014 by H. P. L. De Guevara, Héctor Perez Ladron de Guevara, A. G. Rodriguez, H. Navarro-Contreras, M. A. Vidal ORCID
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

Ge1-xSnx alloys were grown on GaAs (001) substrates in a conventional R. F. magnetron sputtering system with two independent plasmas not simultaneous focus to substrate. We determined the in-plane and in-growth lattice parameters for different Sn concentrations by high resolution X-ray diffraction (HRXRD). We observed that Ge1-xSnxlayers with low Sn concentrations have pseudomorphic characteristics. But this layers relax at Sn concentrations higher than the ones growth on Ge (001) substrates. We also determined the band gap transitions and we found that the indirect-direct band gap crossover occurs as is predicted in Ge1-xSnx alloys growth on Ge (001). Raman spectroscopy confirms the presence and Sn concentrations of the Ge1-xSnx layers.