Published in
IOP Publishing, Japanese Journal of Applied Physics, No. 45(46), p. L1087-L1089, 2007
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Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz
Journal article published in 2007 by
Yi Pei,
Rongming Chu 
,
Nicholas A. Fichtenbaum,
Zhen Chen,
David Brown,
Likun Shen,
Stacia Keller,
Steven P. DenBaars,
Umesh K. Mishra
,
Nicholas A. Fichtenbaum,
Zhen Chen,
David Brown,
Likun Shen,
Stacia Keller,
Steven P. DenBaars,
Umesh K. Mishra
This paper was not found in any repository, but could be made available legally by the author.
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